The role of interface between electron transport layer and perovskite in halogen migration and stabilizing perovskite solar cells with Cs4SnO4
The role of interface between electron transport layer and perovskite in halogen migration and stabilizing perovskite solar cells with Cs4SnO4
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电子传输层和钙钛矿之间的界面在卤素迁移和Cs4SnO4稳定钙钛矿太阳能电池中的作用
DOI：
10.1039/c8ta09382b
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发表时间：
2018-11
期刊：
影响因子：
--
通讯作者：
Wang Liduo
中科院分区：
文献类型：
--
作者：
Zhao Bingxin;Niu Guangda;Dong Qingshun;Liu Jing;Li Nan;Li Jiangwei;Wang Liduo
虽然钙钛矿太阳能电池具有优异的功率转换效率，但对电场的稳定性差以及通常观察到的器件滞后现象严重限制了它们的应用。离子迁移来自卤素从晶格点向卤素空位的迁移。考虑到位于钙钛矿和载流子传输层之间的界面处的强内建电势，在这里，我们提出，它是在界面耗尽区的离子迁移，占主导地位的设备滞后。实现无钙钛矿器件的最有效方法是钝化界面处而不是钙钛矿膜内的离子迁移。我们利用Cs4 SnO 4作为改性层，它可以有效地抑制界面处的缺陷，从而消除滞后，以及移动钙钛矿/SnO 2的导带更接近，减少带错位。此外，Cs+部分扩散到（FAPbI 3）0.85（MAPbBr 3）0.15中有利于朝向长期光照射的相稳定性。因此，我们相信本文提供了一个新的理解钙钛矿太阳能电池中的离子迁移过程，Cs4 SnO 4改性是一种有效的，也是通用的方法来克服器件滞后问题。
Although perovskite solar cells exhibit excellent power conversion efficiency, the poor stability toward electrical fields and the typically observed device hysteresis phenomenon severely restrict their applications. Ionic migration comes from the migration of halogen from lattice points to halogen vacancies. Considering the strong built-in potential located at the interface between perovskite and carrier transport layers, here we propose that it is the ionic migration at the interfacial depletion region that dominates device hysteresis. The most effective way to achieve hysteresis-free devices is to passivate ionic migration at the interface rather than within perovskite films. We utilized Cs4SnO4 as a modification layer, which could effectively suppress the defects at the interface and thus eliminate hysteresis, as well as shift the conduction band of perovskite/SnO2 closer and decrease the band misalignment. In addition, the partial diffusion of Cs+ into (FAPbI3)0.85(MAPbBr3)0.15 is beneficial for phase stability toward long-term light illumination. Hence, we believe this paper provides a new understanding about the ionic migration process within perovskite solar cells, and Cs4SnO4 modification is an effective and also general method to overcome the device hysteresis issue.
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影响因子：
11.9
作者：
Eperon, Giles E.;Paterno, Giuseppe M.;Snaith, Henry J.
通讯作者：
Snaith, Henry J.
影响因子：
--
作者：
E. Podgornov;I. Prosvirin;V. Bukhtiyarov
通讯作者：
E. Podgornov;I. Prosvirin;V. Bukhtiyarov
影响因子：
56.9
作者：
McMeekin, David P.;Sadoughi, Golnaz;Snaith, Henry J.
通讯作者：
Snaith, Henry J.
DOI：
10.1002/cphc.201402071
发表时间：
2014-08
期刊：
Chemphyschem : a European journal of chemical physics and physical chemistry
影响因子：
--
作者：
Desireé M De Los Santos;T. Aguilar;A. Sánchez-Coronilla;J. Navas;N. Cruz Hernández;R. Alcántara;C. Fernández-Lorenzo;J. Martín-Calleja
通讯作者：
Desireé M De Los Santos;T. Aguilar;A. Sánchez-Coronilla;J. Navas;N. Cruz Hernández;R. Alcántara;C. Fernández-Lorenzo;J. Martín-Calleja
影响因子：
19
作者：
Gong, Xiu;Li, Meng;Liao, Liang-Sheng
通讯作者：
Liao, Liang-Sheng