From stable Sb- and Bi-centered radicals to a compound with a Ga=Sb double bond.
From stable Sb- and Bi-centered radicals to a compound with a Ga=Sb double bond.
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DOI:
10.1038/s41467-017-02581-2
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发表时间:
2018-01-08
影响因子:
16.6
通讯作者:
Schulz S
中科院分区:
文献类型:
--
作者:
Ganesamoorthy C;Helling C;Wölper C;Frank W;Bill E;Cutsail GE 3rd;Schulz S
Neutral stibinyl and bismuthinyl radicals are typically short-lived, reactive species. Here we show the synthesis and solid-state structures of two stable stibinyl [L(Cl)Ga]2Sb· 1 and bismuthinyl radicals [L(I)Ga]2Bi· 4, which are stabilized by electropositive metal centers. Their description as predominantly metal-centered radicals is consistent with the results of NMR, EPR, SQUID, and DFT studies. The Lewis-acidic character of the Ga ligands allow for significant electron delocalization of the Sb- and Bi- unpaired radical onto the ligand. Single-electron reduction of [L(Cl)Ga]2Sb· gave LGaSbGa(Cl)L 5, the first compound containing a Ga=Sb double bond. The π-bonding contribution is estimated to 9.56 kcal mol−1 by NMR spectroscopy. The bonding situation and electronic structure is analyzed by quantum mechanical computations, revealing significant π backdonation from the Sb to the Ga atom. The formation of 5 illustrates the high-synthetic potential of 1 for the formation of new compounds with unusual electronic structures. Radicals of heavy main-group elements represent important intermediates in chemical synthesis, yet few have been isolated. Here the authors stabilize neutral stibinyl and bismuthinyl radicals using gallium-based ligands, and reduce the former to afford a Ga=Sb double bond-containing complex.
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影响因子:
16.6
作者:
Kretschmer, Robert;Ruiz, David A.;Bertrand, Guy
通讯作者:
Bertrand, Guy
影响因子:
16.6
作者:
Biaso, Frederic;Cantat, Thibault;Geoffroy, Michel
通讯作者:
Geoffroy, Michel
影响因子:
16.6
作者:
Li, Tao;Wei, Houjia;Wang, Xinping
通讯作者:
Wang, Xinping
DOI:
10.1039/c29710000656
发表时间:
1971-01-01
期刊:
JOURNAL OF THE CHEMICAL SOCIETY D-CHEMICAL COMMUNICATIONS
影响因子:
--
作者:
KOST, D;CARLSON, EH;RABAN, M
通讯作者:
RABAN, M
影响因子:
15
作者:
Gomberg, M
通讯作者:
Gomberg, M