Synthesis of Al- or Ga-Substituted Bi3Fe5O12 Garnet Films
Synthesis of Al- or Ga-Substituted Bi3Fe5O12 Garnet Films
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Al 或 Ga 取代的 Bi3Fe5O12 石榴石薄膜的合成
DOI：
10.3379/jmsjmag.18.157
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
T. Suzuki
中科院分区：
文献类型：
--
作者：
S. Nishida;T. Okuda;H. Ohsato;Y. Kato;T. Suzuki
利用交替离子束溅射技术，成功地在Bi3Fe5O12 （BIG）薄膜中取代了Al3+和Ga3+离子。通过晶格常数、铁磁共振场和磁矩的测量证实了取代的作用。通过Al或Ga取代可以调节BIG薄膜的晶格常数和饱和磁化强度，类似于Al或Ga取代YIG。通过Al或Ga取代，可以使BIG薄膜的磁各向异性从易平面型转变为垂直单轴型。单轴各向异性主要归因于应力诱导的各向异性。
Using an alternating ion-beam-sputtering technique, Al3+ and Ga3+ ions were successfully substituted for Fe3+ ions in Bi3Fe5O12 (BIG) film. The effects of substitution were confirmed by measurements of the lattice constant, ferromagnetic resonance field and magnetic moment. The lattice constant and saturation magnetization of BIG film can be adjusted by Al or Ga substitution, which is analogous to Al- or Ga-substituted YIG. The magnetic anisotropy of a BIG film can be changed from the easy-plane type to the perpendicular uniaxial type by Al or Ga substitution. The uniaxial anisotropy is mainly attributed to the stress-induced anisotropy.