Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices
Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices
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使用射频裂纹硒自由基束源生长多晶 Cu(In,Ga)Se2 薄膜及其在光伏器件中的应用
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
S. Niki
中科院分区：
文献类型：
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作者：
S. Ishizuka;H. Shibata;A. Yamada;P. Fons;K. Sakurai;K. Matsubara;S. Niki
使用射频裂纹 Se 自由基束源生长 Cu(In,Ga)Se2 (CIGS) 薄膜。显示出薄膜特性的独特组合、高致密且光滑的表面以及大晶粒尺寸。这些特征似乎对光伏性能没有显着影响。人们发现，通过调节硒自由基源参数，可以控制块状 CIGS 中的缺陷，从而导致电致发光特性和光致发光特性发生相应的变化。使用硒自由基源生长的 CIGS 吸收器制造的太阳能电池已证明其能量转换效率为 17.5%，与硒蒸发源生长的 CIGS 器件相当。
Cu(In,Ga)Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.