High temperature GaAs X-ray detectors
High temperature GaAs X-ray detectors
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DOI:
10.1063/1.5005878
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发表时间:
2017-12-28
影响因子:
3.2
通讯作者:
Barnett, A. M.
中科院分区:
文献类型:
--
作者:
Lioliou, G.;Whitaker, M. D. C.;Barnett, A. M.
Two GaAs p(+)-i-n(+) mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 degrees C to -20 degrees C. The devices had 10 mu m thick i layers with different diameters: 200 mu m (D1) and 400 mu m (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 degrees C to 0.66 keV at -20 degrees C for the spectrometer with D1, and from 2.71 keV at 100 degrees C to 0.71 keV at -20 degrees C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).