High temperature GaAs X-ray detectors

High temperature GaAs X-ray detectors
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DOI:
10.1063/1.5005878
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发表时间:
2017-12-28
影响因子:
3.2
通讯作者:
Barnett, A. M.
Barnett, A. M.
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Lioliou, G.;Whitaker, M. D. C.;Barnett, A. M.

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两个GaAs p(+)-i-n(+)梅萨X射线光电二极管在100 ℃至-20 ℃温度范围内的电学和光子计数X射线光谱性能进行了表征。这些装置具有10 μ m厚的i层,具有不同的直径:200 μ m(D1)和400 μ m(D2)。电气表征包括在高达50 kV/cm的内部电场强度下的暗电流和电容测量。这两种设备的确定属性与先前报道的结果进行了比较,这些结果旨在为恶劣环境下光子计数X射线光谱仪的未来发展提供信息,例如,高温环境中行星表面的x射线荧光光谱学。对于具有D1的光谱仪,获得的最佳能量分辨率(在5.9 keV下的半峰全宽)从100 ℃下的2.00 keV降低到-20 ℃下的0.66 keV,并且对于具有D2的光谱仪,从100 ℃下的2.71 keV降低到-20 ℃下的0.71 keV。介电噪声被认为是在光谱中的噪声的主要来源,除了在高温和长的成形时间,在那里的主要来源的双峰展宽被认为是白色平行噪声。(C)2017年作者。除非另有说明,否则所有文章内容均根据知识共享署名(CC BY)许可证(http://creativecommons.org/licenses/by/4.0/)进行许可。
Two GaAs p(+)-i-n(+) mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 degrees C to -20 degrees C. The devices had 10 mu m thick i layers with different diameters: 200 mu m (D1) and 400 mu m (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 degrees C to 0.66 keV at -20 degrees C for the spectrometer with D1, and from 2.71 keV at 100 degrees C to 0.71 keV at -20 degrees C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).