Magnetic and electric properties of Fe-doped ITO thin films
Magnetic and electric properties of Fe-doped ITO thin films
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DOI：
10.1016/j.jmmm.2006.10.781
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发表时间：
2007-03
影响因子：
2.7
通讯作者：
T. Ohno;T. Kawahara;M. Murasugi;Hidekazu Tanaka;T. Kawai;S. Kohiki
中科院分区：
文献类型：
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作者：
T. Ohno;T. Kawahara;M. Murasugi;Hidekazu Tanaka;T. Kawai;S. Kohiki
采用脉冲激光沉积方法，在氧（包括8%臭氧）分压为5、1、1×10−1、1×10−2和1×10−3Pa的条件下，在钇稳定的氧化锆衬底上外延生长了fe掺杂ITO薄膜。薄膜的磁性和电性能随氧分压的变化而有系统地变化。在5和1Pa条件下生长的薄膜具有顺磁性和半导体性质，在10−1Pa条件下生长的薄膜具有铁磁性和半导体性质，在10−2和10−3Pa条件下生长的薄膜具有铁磁性和金属性质。在低于10−1Pa的压力下生长的Fe-ITO薄膜表现出室温铁磁性。
Films of Fe-doped ITO were epitaxially grown at oxygen (including 8% ozone) partial pressures of 5, 1, 1×10−1,1×10−2, and 1×10−3Pa on yttria-stabilized zirconia substrates by a pulsed-laser deposition method. Magnetic and electric properties of the films varied systematically with the oxygen partial pressure. The films grown at 5 and 1Pa were paramagnetic and semiconducting, that at 10−1Pa was ferromagnetic and semiconducting, and those at 10−2and 10−3Pa were ferromagnetic and metallic. The Fe–ITO films grown at the pressure below 10−1Pa exhibited room-temperature ferromagnetism.