Dielectric properties of Fe-doped Ba0.65Sr0.35TiO3 thin films fabricated by the sol–gel method
Dielectric properties of Fe-doped Ba0.65Sr0.35TiO3 thin films fabricated by the sol–gel method
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DOI：
10.1016/j.ceramint.2009.03.023
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发表时间：
2009-09
影响因子：
5.2
通讯作者：
Y. Ye;T. Guo
中科院分区：
文献类型：
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作者：
Y. Ye;T. Guo
采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了Fe掺杂的Ba0.65Sr0.35TiO3（BST）薄膜。研究了未掺杂和掺杂1mol%和2mol%铁的BST薄膜的结构和表面形貌、介电性能和漏电流特性。结果表明，Fe掺杂的BST薄膜表现出改善的介电损耗，可调谐性，和漏电流特性相比，未掺杂的BST薄膜。铁掺杂BST薄膜的品质因数（FOM）的改善表明在微波可调谐器件中具有很强的应用潜力。
Fe-doped Ba0.65Sr0.35TiO3(BST) thin films have been fabricated on Pt/Ti/SiO2/Si substrate using the sol–gel method. The structural and surface morphology, dielectric, and leakage current properties of undoped and 1mol% and 2mol% Fe-doped BST thin films have been studied in detail. The results demonstrate that the Fe-doped BST films exhibit improved dielectric loss, tunability, and leakage current characteristics as compared to the undoped BST thin films. The improved figure of merit (FOM) of Fe-doped BST thin film suggests a strong potential for utilization in microwave tunable devices.