Characterization of SiC JFET for Temperature Dependent Device Modeling
Characterization of SiC JFET for Temperature Dependent Device Modeling
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用于温度相关器件建模的 SiC JFET 表征
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
T. Hikihara
中科院分区：
文献类型：
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作者：
T. Funaki;A. Kashyap;H. Mantooth;J. Balda;F. Barlow;T. Kimoto;T. Hikihara
碳化硅（SiC）被认为是目前可以与硅（Si）材料竞争用于功率开关器件的宽带隙半导体材料。SiC器件的紧凑电路仿真模型对于设计和分析转换器电路至关重要;特别是如果与Si器件进行比较。SiC功率开关器件的结构和组成不可避免地不同于传统的Si器件，以便利用材料的优越性。因此，该器件的操作特性不同于常规Si器件的操作特性。这些特性不能通过当前的Si功率器件模型准确地预测。因此，开发SiC器件的电路仿真模型的动机。此外，SiC晶体管还没有像二极管那样彻底地表征。本文描述了SiC结型场效应管的建模和参数提取的目的，然后可以在电路仿真中使用。该表征基于使用曲线描记器的直流（电流-电压）特性测量和使用阻抗分析仪的交流（电容[阻抗] -电压）测量。请注意，SiC JFET的特性数据仅适用于250°C的环境温度，该器件的特性为室温至450°C，证明了SiC JFET的高温工作。为此，这些器件被封装在专用的高温封装中，测量夹具被专门制造以承受高环境温度。埋在评估SiC JFET的体二极管也具有潜在的同步整流器应用。
Silicon Carbide (SiC) is considered the wide band gap semiconductor material that can presently compete with silicon (Si) material for power switching devices. Compact circuit simulation models for SiC devices are of utmost importance for designing and analyzing converter circuits; in particular, if comparisons with Si devices will be performed. The SiC power switching device structure and composition inevitably differs from those of conventional Si devices so as to harness the superiority of the material. The operational characteristics of the device thus are different from those of conventional Si devices. These characteristics cannot be accurately predicted by current Si power device models. Hence, the motivation to develop circuit simulation models for SiC devices. Moreover, SiC transistors have not been characterized as thoroughly as diodes. This paper characterizes SiC JFETs for the purpose of modeling and parameter extraction which can then be utilized in circuit simulations. The characterization is based on the dc (current-voltage) characteristic measurements using a curve tracer and on the ac (capacitance [impedance] — voltage) measurements using an impedance analyzer. Noting that characterization data for SiC JFETs are only available up to an ambient temperature of 250°C, the device is characterized from room temperature to 450°C demonstrating the high temperature operation of SiC JFETs. To this end, the devices were packaged in dedicated high temperature packages, and measurement fixtures were specially fabricated to withstand high ambient temperatures. The body diode buried in the evaluated SiC JFET is also characterized for potential synchronous rectifier applications.