Theory of recombination-enhanced defect reactions in semiconductors
Theory of recombination-enhanced defect reactions in semiconductors
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DOI：
10.1103/physrevb.12.3286
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发表时间：
1975-10
影响因子：
3.7
通讯作者：
J. Weeks;J. Tully;L. Kimerling
中科院分区：
文献类型：
--
作者：
J. Weeks;J. Tully;L. Kimerling
我们提出了一个定量的理论来描述电子空穴复合后的缺陷反应率的增强。该理论基于以下机制：非辐射电子或空穴捕获时释放的能量主要转化为最初位于缺陷附近的振动能量。这种振动能可用于促进缺陷反应，如扩散。这个过程可以用类似于成功的单分子反应的Rice-Ramsperger-卡塞尔理论的公式来描述。增强反应速率的表达式取决于缺陷的两个物理性质：“缺陷分子”的有效振子的数量和晶格中局部振动能的耗散率。该理论与Kimerling和Lang最近的实验一致，可能有助于理解半导体中发生的几个相关过程。
We present a quantitative theory to describe enhancement of defect reaction rates upon electron-hole recombination. The theory is based on the following mechanism: energy liberated upon nonradiative electron or hole capture is converted largely into vibrational energy that is initially localized in the vicinity of the defect. This vibrational energy can be utilized to promote defect reactions such as diffusion. The process can be described using a formulation similar to the successful Rice-Ramsperger-Kassel theory of unimolecular reactions. The resulting expression for the enhanced reaction rate depends upon two physical properties of the defect: the number of effective oscillators of the" defect molecule" and the rate of dissipation of local vibrational energy to the lattice. The theory is consistent with recent experiments of Kimerling and Lang and may be useful for understanding several related processes occurring in semiconductors.