Self-heating effects in silicon carbide MESFETs
Self-heating effects in silicon carbide MESFETs
复制标题
DOI：
10.1109/16.877187
复制
发表时间：
2000-11-01
影响因子：
3.1
通讯作者：
Brylinski, C
中科院分区：
文献类型：
--
作者：
Royet, AS;Ouisse, T;Brylinski, C
碳化硅材料为MESFET应用提供了特定的优势。然而，为了使它们得到很好的利用，需要施加比GaAs器件更高的漏极电压。因此，尽管SiC衬底的高导热性，这导致大的功率耗散和局部温度的显著增加。取决于器件配置，这种自加热可以在非常低的频率下在接近de制度处引起负微分电导。本文提出了一个简单的分析模型，该模型对MESFET的静态特性进行了合理的拟合，并给出了进一步的实验证据，证实了模型的预测。
Silicon carbide materials offer specific advantages to MESFET applications. However, to put them to good use requires to apply higher drain voltages than in GaAs devices. Therefore, in spite of the high thermal conductivity of the SIC substrates, this leads to a large power dissipation and a substantial increase in the local temperature, Depending on the device configuration, this self-heating can induce a negative differential conductance at very low frequency near de regime. A simple analytical model is proposed, which yields a reasonable fit of the MESFET static characteristics, Further experimental evidence for such effects is also given, which corroborates the predictions of the model.