Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures
Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures
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DOI:
10.1016/j.jcrysgro.2019.02.037
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发表时间:
2019-04
影响因子:
1.8
通讯作者:
Wenxian Yang;Yukun Zhao;Yuanyuan Wu;Xuefei Li;Z. Xing;L. Bian;Shulong Lu;Muchang Luo
中科院分区:
文献类型:
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作者:
Wenxian Yang;Yukun Zhao;Yuanyuan Wu;Xuefei Li;Z. Xing;L. Bian;Shulong Lu;Muchang Luo