Tuning the biocompatibility of aluminum nitride
Tuning the biocompatibility of aluminum nitride
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DOI：
10.1016/j.matlet.2016.11.041
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发表时间：
2017-02-15
影响因子：
3
通讯作者：
Ivanisevic, Albena
中科院分区：
文献类型：
--
作者：
Berg, Nora G.;Paskova, Tania;Ivanisevic, Albena
采用反应溅射法在体外生长了高质量的电子级氮化铝薄膜。半导体材料在细胞培养中显示出高度的稳定性，随着时间的推移具有非常少的Al浸出。与其他III族氮化物材料不同，干净的AlN不会促进细胞粘附到其表面。这项工作表明，肽的功能化可以用来逆转这种行为。细胞培养物中AIN的存在对神经型细胞行为没有任何不利影响，如通过细胞活力和活性氧测定所证实的。
High-quality, electronic-grade, aluminum nitride thin films grown by reactive sputtering were studied in vitro. The semiconductor material showed high degree of stability in cell culture with very little Al leaching over time. Unlike other III-nitride materials, clean AIN does not promote the adhesion of cells to its surface. The work demonstrates that functionalization with peptides can be used to reverse this behavior. The presence of AIN in cell culture does not have any adverse effects on neurotypic cell behavior as confirmed by cell viability and reactive oxygen species assays.