Dislocation roughening in quantum crystals
Dislocation roughening in quantum crystals
复制标题
量子晶体中的位错粗糙化
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
D. Schmeltzer
中科院分区：
文献类型：
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作者：
D. Aleinikava;E. Dedits;A. Kuklov;D. Schmeltzer
我们讨论了几乎理想晶体中量子位错的一般行为。结果表明，任意小Peierls势和位错扭结之间的库仑型弹性相互作用相结合，阻止了位错的量子粗化。热产生的扭结导致经典的粗糙，这导致在与扭结能量相当的温度下晶体的剪切模数软化。这种效应是在Day&Beamish在固体4He中观察到的剪切模软化的背景下讨论的。
We address generic behavior of quantum dislocations in almost ideal crystals. It is proven that the combination of arbitrary small Peierls potential and Coulomb-type elastic interaction between dislocation kinks prevents quantum roughening of dislocations. Thermally created kinks induce classical roughening which leads to softening of crystal shear modulus at temperatures comparable to the kink energy. This effect is discussed in the context of the shear modulus softening observed by Day & Beamish in solid 4He.