Martensitic transformation in thin-film (TiPd)50(TiNi)50
Martensitic transformation in thin-film (TiPd)50(TiNi)50
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DOI：
10.1080/095008399177336
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发表时间：
1999-05-01
影响因子：
1.2
通讯作者：
Wuttig, M
中科院分区：
文献类型：
--
作者：
Mathews, S;Li, J;Wuttig, M
利用磁控溅射技术在高温下制备了（TiPd）（50）（TiNi）（50）形状记忆合金。“生长”薄膜是结晶的，不需要沉积后退火。约1.5 μ m厚的SMA薄膜生长在约80 μ m厚的Si（100）悬臂梁上，在室温附近表现出马氏体转变。通过测量悬臂梁阻尼、悬臂梁弯曲和x射线衍射（XRD）模式观察到马氏体转变，这些都是温度的函数。XRD谱图表明，该膜在高温下为纯奥氏体（B2相），在低温下为奥氏体和马氏体的混合物。阻尼测量表明，低温马氏体是B19相和B19′相的混合物。转变是可逆的，并表现出约25度的温度滞后。
We have produced thin films of(TiPd)(50)(TiNi)(50) shape-memory alloy (SMA) by de magnetron sputtering at an elevated temperature. 'As-grown' films were crystalline, requiring no post-deposition anneal. A SMA film, approximately 1.5 mu m thick, grown on a Si(100) cantilever, approximately 80 mu m thick, showed a martensitic transformation near room temperature. The martensitic transformation was observed by measuring cantilever damping, cantilever bending and X-ray diffraction (XRD) patterns, all as functions of temperature. The XRD patterns indicated that the film was purely austenite (B2 phase) at high temperatures and was a mixture of austenite and martensite at low temperatures. Damping measurements suggest that the low-temperature martensite is a mixture of B19 and B19' phases. The transformation was reversible and exhibited a temperature hysteresis of approximately 25 degrees.