Intracellular DNA Damage Induced by Non-thermal, Intense Narrowband Electric Fields
Intracellular DNA Damage Induced by Non-thermal, Intense Narrowband Electric Fields
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DOI：
10.1109/tdei.2009.5293940
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发表时间：
2009-10-01
影响因子：
3.1
通讯作者：
Abe, Shin-Ichi
中科院分区：
文献类型：
--
作者：
Nomura, Naoyuki;Yano, Masahiko;Abe, Shin-Ichi
用碱性彗星法研究了强脉冲正弦电场（IBSEFs）对细胞内DNA的损伤。在间隔1 mm的平行电极间悬浮介质中，将200 μ m的不同频率值（300 kHz-100MHz）和强度（高达200 kV/m）的非热IBSEF应用于中国仓鼠卵巢（CHO）细胞。彗星试验表明，频率超过1 MHz的100 kV/m IBSEF或场强超过3 kV/m的100 MHz IBSEF可引起明显的DNA损伤。根据交变电场作用下简化胞体模型上电场的数值计算，胞内电场强度随交变频率的增加而增大。引起DNA损伤的最小场强在10 ~ 30 kV/m范围内。这种细胞内的强磁场可能引发导致DNA损伤的生物过程。
Intracellular DNA damages caused by intense burst sinusoidal electric fields (IBSEFs) were investigated by means of an alkaline comet assay method. Non-thermal, 200 mu s-long IBSEF with various frequency values (300 kHz-100MHz) and strengths (up to 200 kV/m) was applied to Chinese hamster ovary (CHO) cells in a suspending medium between I mm gap parallel electrodes. The comet assay suggests that 100 kV/m IBSEF with frequencies exceeding I MHz or 100 MHz IBSEFs with field strengths exceeding 3 kV/m induces significant DNA damage. According to the numerical calculation of the electric field over a simplified cell model under an alternating electric field, the intracellular field strength increases with increasing alternating frequency. The minimum level of the field strength that induces the DNA damage is in the range of 10-30 kV/m. This intracellular strong field might trigger biological processes leading to the DNA damage.