Vertical channel all-organic thin-film transistors
Vertical channel all-organic thin-film transistors
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DOI：
10.1063/1.1584786
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发表时间：
2003-06-23
影响因子：
4
通讯作者：
Kowalsky, W
中科院分区：
文献类型：
--
作者：
Parashkov, R;Becker, E;Kowalsky, W
技术上简单和成本效益的过程是必不可少的有机电子器件的制造。本文提出了一种在玻璃基板上制作垂直沟道全有机薄膜晶体管的概念。该概念通过定义绝缘层厚度的通道长度，避免了对具有高横向分辨率的图案化过程的需要。我们的器件基于市售的聚（乙烯二氧噻吩）/聚（苯乙烯磺酸盐）分散体，用于源极、漏极和栅极，光刻胶作为绝缘层，光敏聚乙烯醇作为栅极绝缘体。并五苯被用作有机半导体。实现了通道长度为2.4 mm，宽度为1 mm的功能器件，并报道了这些器件的电气特性。(C) 2003年美国物理研究所。
Technologically simple and cost-effective processes are essential for the fabrication of organic electronic devices. In this letter, we present a concept for making vertical channel all-organic thin-film transistors on glass substrate. This concept avoids the need for patterning processes with high lateral resolution by defining the channel length through the thickness of an insulating layer. Our devices are based on commercially available poly(ethylene dioxythiophene)/poly(styrene sulfonate) dispersion for source, drain, and gate electrodes, photoresist as the insulating layer and photosensitized poly(vinyl alcohol) as the gate insulator. Pentacene was used as the organic semiconductor. Functional devices with channel length of 2.4 mum and width of 1 mm have been realized, and we report electrical characteristics of these devices. (C) 2003 American Institute of Physics.