Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
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DOI：
10.1143/apex.3.081001
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发表时间：
2010-07
影响因子：
2.3
通讯作者：
Y. Saitoh;Kazuhide Sumiyoshi;M. Okada;Taku Horii;Tomihito Miyazaki;H. Shiomi;M. Ueno;K. Katayama-K.-Katay
中科院分区：
文献类型：
--
作者：
Y. Saitoh;Kazuhide Sumiyoshi;M. Okada;Taku Horii;Tomihito Miyazaki;H. Shiomi;M. Ueno;K. Katayama-K.-Katay
垂直 GaN 肖特基势垒二极管 (SBD) 是在低位错密度的独立式 GaN 衬底上制造的。通过使用传统光致发光测量降低黄色发光强度来优化生长条件，获得电子迁移率为 930 cm2 V-1 s-1 的高质量 n-GaN 漂移层。 SBD 的比导通电阻 (RonA) 和击穿电压 (VB) 分别为 0.71 mΩ cm2 和超过 1100 V。品质因数 (VB2/RonA) 为 1.7 GW/cm2，这是之前报道的 GaN 和 SiC 的 SBD 中的最高值。
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on freestanding GaN substrates with low dislocation density. High quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements. The specific on-resistance (RonA) and the breakdown voltage (VB) of the SBDs were 0.71 mΩ cm2 and over 1100 V, respectively. The figure of merit (VB2/RonA) was 1.7 GW/cm2, which is the highest value among previously reported SBDs for both GaN and SiC.