Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique
Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique
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DOI：
10.1063/1.4805035
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发表时间：
2013-05-13
影响因子：
4
通讯作者：
Wang, T.
中科院分区：
文献类型：
--
作者：
Athanasiou, M.;Kim, T. K.;Wang, T.
By means of combining a very cost-effective lift-off process and a nanosphere lithography technique, we have fabricated two dimensional (2D) photonic crystal (PhC) structures on an InGaN/GaN multiple quantum well structure. Significant enhancement in photoluminescence (PL) intensity has been observed when the emission wavelength is within the photonic bandgap. Time-resolved PL measurements have shown that the spontaneous emission rate is strongly reduced by a factor of similar to 4 due to the PhC effect. As a consequence, the emission intensity along 2D PhC slab-plane directions is effectively suppressed and redistributed to the direction normal to the 2D PhC slab-plane simultaneously. Temperature-dependent PL measurements have confirmed that the enhanced PL intensity is due to an increase in extraction efficiency as a result of the PhC effect. (C) 2013 AIP Publishing LLC.
