Development of Long Coated Conductors with High In-field Ic Performance by PLD Method at High Production Rate
Development of Long Coated Conductors with High In-field Ic Performance by PLD Method at High Production Rate
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DOI：
10.1016/j.phpro.2016.04.039
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
A. Ibi;T. Yoshida;T. Izumi;Y. Shiohara;Daisaku Yokoe;T. Kato;T. Hirayama
中科院分区：
文献类型：
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作者：
A. Ibi;T. Yoshida;T. Izumi;Y. Shiohara;Daisaku Yokoe;T. Kato;T. Hirayama
我们制作了短样品和93米长的涂层导体（C。C.）的用IBAD和PLD方法研究了EuBa_2Cu_3O_（7-δ）（EuBCO）与BaHfO_3（BHO）的相互作用，在短样品上获得了141.2（77 K，3 T）和411.3（65 K，3 T）A/cm ~（-1）的最小I_c值（I_c（min）），在93 m长样品上获得了133.9（77 K，3 T）A/cm ~（-1）的最小I_c值。C.厚度为3.6 μm。此外，这种长的EuBCO与BHO涂层导体也表现出较高的均匀性，在磁场中的n-value和mIc分布。然而，获得高的infieldIc性能的沉积速率相对较低，为10 μm/h。为了实现具有BHO涂覆导体的EuBCO的低生产成本，需要提高具有高Icis的BHO层的EuBCO的沉积速率。为了解决这个问题，我们优化了生长条件，包括沉积条件。本工作的目的之一是改变层生长模式从气-固（VS）模式的气-液-固（VLS）的一个与BHO层的EuBCO实现高生产率和保持高的现场IcandJc性能的薄膜沉积在缓慢的沉积速率。结果表明，在77 K、3 T、1.35 μm厚的条件下，以约40 μm/h的沉积速率和约10 μ m/h的生产速率制备出了48.7 A/cm·w的Ic（min）。
We fabricated short samples and a 93 m long coated conductor (C. C.) of EuBa2Cu3O7-δ(EuBCO) with BaHfO3(BHO) by the IBAD and the PLD methods, which exhibited the high in-field minimumIcvalue, (Ic(min)), performance of 141.2 (77 K in 3 T) and 411.3 (65 K in 3 T) A/cm-w for a short sample, and 133.9 (77 K in 3 T) A/cm-w for 93 m long C. C. with 3.6 μm in thickness, respectively. Moreover, this long EuBCO with BHO coated conductor also showed high uniform longitudinalIcdistributions andn-value in magnetic fields. However, the deposition rate for obtaining the high in-fieldIcperformance was comparatively slow down to 10 μm/h. To realize the low production cost for EuBCO with BHO coated conductors, improvement of the deposition rate of the EuBCO with BHO layer with highIcis required. To solve this problem, we optimized growth conditions including deposition conditions. One of the objectives of this work was changing the layer growth mode from the vapor-solid (VS) mode to the vapor-liquid-solid (VLS) one to fabricate EuBCO with BHO layers for achievement of high production rate and maintaining the high in-fieldIcandJcperformance of the films deposited at slow deposition rates. As a result, we fabricated EuBCO with BHO coated conductors at a high deposition rate of about 40 μm/h and production rate of about 10 m/h, which revealed theIc(min) value of 48.7 A/cm-w at 77 K in 3 T for 1.35 μm in thickness.