Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions
Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions
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DOI：
10.1063/1.5017524
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发表时间：
2018-01
影响因子：
3.2
通讯作者：
Li Yin;Xiaocha Wang;W. Mi
中科院分区：
文献类型：
--
作者：
Li Yin;Xiaocha Wang;W. Mi
Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.
