Investigation of the L6-X6 intervalley scattering in AlxGa1-xAs by measuring hot carrier dynamics in a K not=0 satellite valley
Investigation of the L6-X6 intervalley scattering in AlxGa1-xAs by measuring hot carrier dynamics in a K not=0 satellite valley
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通过测量 K not=0 卫星谷中的热载流子动力学研究 AlxGa1-xAs 中的 L6-X6 层间散射
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
A. Nozik
中科院分区：
文献类型：
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作者：
W. Wang;K. Shum;R. Alfano;D. Szmyd;A. Nozik
利用飞秒可见光抽运和红外探测吸收光谱研究了Al_（0.6）Ga_（0.4）As中X_6谷底部电子布居随时间的演化.从测得的动力学数据确定的L6至X6谷间散射时间约为200 fs。揭示了L6到X6谷间散射对热载流子弛豫过程的作用。
The time evolution of the electron population in the bottom of the X6 valley in Al0.6Ga0.4As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L6 to X6 intervalley scattering time of approximately 200 fs was determined from the measured kinetic data. The role of the L6 to X6 intervalley scattering for the relaxation process of hot carriers was revealed.