Reply to "Comment on D'etails of Sample Dependence and Transport Properties of URu2Si2"
Reply to "Comment on D'etails of Sample Dependence and Transport Properties of URu2Si2"
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回复“URu2Si2的样品依赖性和输运性质的详细评论”
DOI：
10.1143/jpsj.81.056002
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发表时间：
2012
影响因子：
1.7
通讯作者：
D. Aoki
中科院分区：
文献类型：
--
作者：
Kajitani;T.;染矢雅之;D. Aoki
Butch等人的评论给出了仔细研究静水压力(P)条件对特定晶体影响的物理学家的观点。在我们的文章中，1)我们不讨论这个问题，但我们集中在单晶性质。主要原因是这是一个微妙的点，因为压力实验通常是在一个固定体积的钳形细胞中进行的。例如，当材料在不同方向上膨胀或收缩时，压力介质的凝固和甚至相变反馈的综合效应[例如这里的隐序（HO）]可能导致偏离理想的流体静力条件。根据观察到的实验规律，当晶体尺寸相对于压力池的体积较小时，可以得到最佳的流体静力性，这在压力非弹性中子散射实验中是无法实现的。对压力条件进行详细研究的关键是实现与中子散射相同的压力池的比较测量，以及原位压力测量。在中子散射实验中实现了这一条件，2)在晶体表面粘贴应变片，跟踪宏观相变发生的位置，甚至可以估计压力的不均匀性。本文所做的工作是为了最大限度地表征样品质量，并能够选择用于量子振荡实验的样品（Shubnikov-de Haas （SdH）和de Haas - van Alphen效应），以精确确定费米表面上HO和反铁磁（AF）特性之间的反馈。3-6)URu2Si2的剩余电阻率（RRR）是选择最佳材料增强量子振荡信号的简单而有效的标准。即使从2k处的值估计RRR，也可以讨论Matthiesen规则的有效性。例如，在我们的经验中，对于RRR低于50的低样本，没有检测到SdH信号。应该注意的是，补充信息是由比热测量给出的。由于在晶体的中子衍射图样中观察到较大的消光，故测定其绝对值
The comment from Butch et al. gives the view of physicists who have carefully studied the effects of hydrostatic pressure (P) conditions on a specific crystal. In our article, 1) we do not discuss this problem but we concentrate on the single crystal properties. The main reason is that it is a delicate point as pressure experiments are usually conducted with a constant volume in a clamp cell. For example, the combined effects of the solidification of the pressure medium and even feedback at the phase transition [for example here, hidden order (HO)] when the material may expand or contract in different directions can cause a departure from ideal hydrostatic conditions. As an observed experimental rule, the best approach to hydrostaticity is given when the crystal size is small in compared with the volume of the pressure cell, a condition which is never realized in pressure inelastic neutron scattering experiments. A key point in a detailed study of the pressure conditions to succeed is to realize comparative measurements in the same pressure cell as used in neutron scattering, as well as in situ pressure measurements. Such condition was realized in neutron scattering experiments, 2) where a strain gauge was glued on the crystal face to trace where macroscopic phase transition occurs, and even to estimate pressure inhomogeneity.The work presented in our article was realized to characterize the sample quality at most and to be able to select samples for quantum oscillation experiments (Shubnikov–de Haas (SdH) and de Haas–van Alphen effect) to precisely determine the feedback between HO and antiferromagnetic (AF) properties on the Fermi Surface. 3–6) The residual resistivity ratio (RRR) for URu2Si2 is a simple and an effective criterion for selecting the best material to enhance the quantum oscillation signal, even if RRR is estimated from the value at 2 K and validity of Matthiesen’s rule can be discussed. In our experience, for example, no SdH signal was detected for samples with low RRR of below 50. It should be noted that complementary information is given by specific heat measurement. Because of the large extinction observed in the neutron diffraction pattern of crystals, the determination of an absolute value of the