A 30-40 GHz 1:16 Internally Matched SiGe Active Power Divider for Phased Array Transmitters

A 30-40 GHz 1:16 Internally Matched SiGe Active Power Divider for Phased Array Transmitters
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用于相控阵发射机的 30-40 GHz 1:16 内部匹配 SiGe 有源功率分配器

DOI:
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发表时间:
2007
期刊:
IEEE Custom Integrated Circuits Conference
影响因子:
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通讯作者:
Gabriel M. Rebeiz
Gabriel M. Rebeiz
中科院分区:
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文献类型:
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作者:
J. May;Gabriel M. Rebeiz

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在本文中,我们提出了一个积极的1:16 30-40 GHz的功率分配器实现在0.18妈妈SiGe BiCMOS工艺(爵士SBC 18 HXL)。该2 x 2 mm 2功分器具有4.5 plusmn 1.5 dB的总功率增益,在所有16个通道中,30至40 GHz的均方根相位不平衡小于6度。这种性能是通过使用宽带简并1:4分配器以及级间片内分配器之间的内部匹配来实现的。该芯片采用3.3 V电源供电时功耗为190 mA,比基于聚四氟乙烯的等效PCB传输线1:16功率分配器小15倍。据我们所知,这是第一个1:16 Ka波段有源功分器实现了商业SiGe BiCMOS技术,并显示出出色的幅度和相位平衡在30-40 GHz的范围。
In this paper, we present an active 1:16 30-40 GHz power divider implemented in a 0.18 mum SiGe BiCMOS process (Jazz SBC18HXL). The 2 x 2 mm2 power divider exhibits 4.5 plusmn 1.5 dB total power gain with an rms phase imbalance of less than 6deg from 30 to 40 GHz across all 16 channels. This performance is achieved using wideband degenerated 1:4 splitters, and internal matching between the inter-stage on-chip splitters. The chip consumes 190 mA from a 3.3 V supply, and is 15x smaller than an equivalent Teflon-based PCB transmission-line 1:16 power divider. To our knowledge, this is the first 1:16 Ka-Band active power divider implemented in a commercial SiGe BiCMOS technology, and shows excellent amplitude and phase balance over the 30-40 GHz range.