Characterization of varying sp2/sp3 nanocluster’s grown under various process conditions
Characterization of varying sp2/sp3 nanocluster’s grown under various process conditions
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不同工艺条件下生长的不同 sp2/sp3 纳米团簇的表征
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
De Shounak
中科院分区：
文献类型：
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作者：
S. Niranjana;B. Satyanarayana;U. Niranjan;De Shounak
基于连续或脉冲真空的阴极电弧系统被证明是新颖的，并且对于从绝缘体、半导体到导体的薄膜生长是重要的。有几个关键的工艺参数，如气体成分，衬底条件（温度，压力），沉积速率，沉积时间，衬底位置和电弧类型。工艺参数对纳米团簇的特性和生长有重要影响。工艺参数的变化影响纳米团簇的形貌、结构、组成、电子和光电性能，使其适用于不同的应用。在固定的氮分压条件（10-4托和10-3托）下，在从5 × 10 - 4托到50托的变化的氦分压条件下生长的碳基纳米团簇样品产生具有不同形态和性质的样品。这里提出的各种工艺参数下生长的各种样品的形态细节，一些使用连续和其他使用脉冲阴极电弧工艺。利用扫描电镜、场发射光谱和拉曼光谱研究了碳纳米团簇的特征。提出了一种基于统计参数的sp2/sp3纳米碳分组方法。
Continuous or pulsed vacuum based cathodic arc systems are proven as novel, and important for the thin film growth from insulator, semiconductor to conductor. There are several key process parameters such as Gas composition, conditions at substrate (Temperature, Pressure), Deposition Rate, Deposition time, Position of substrate, and type of arc. The process parameters has a significant influence on the characteristics and growth of nanocluster. The variation in the process parameter affects the nanocluster morphology, structure, composition, electronic and optoelectronic properties, which make it useful for different application. The carbon based nanocluster samples grown at fixed conditions of nitrogen partial pressure (10–4 Torr and 10–3 Torr) under varying conditions of Helium partial pressure from 5x10 – 4 Torr to 50 Torr resulted samples with different morphology and properties. Presented here morphological details of various samples grown under various process parameters, some using continuous and other using pulsed cathodic arc process. Discussed carbon nanocluster characteristics using SEM, Field emission response, and Raman response. Proposed an approach of grouping sp2/sp3 nanocarbons based statistical parameters.