Optical properties of high quality Cu2ZnSnSe4 thin films
Optical properties of high quality Cu2ZnSnSe4 thin films
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DOI：
10.1063/1.3624827
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发表时间：
2011-08-08
影响因子：
4
通讯作者：
Martin, R. W.
中科院分区：
文献类型：
--
作者：
Luckert, F.;Hamilton, D. I.;Martin, R. W.
通过磁控溅射和硒化在裸露或镀钼玻璃基板上制备 Cu2ZnSnSe4 薄膜，并通过一系列技术进行了研究。光致发光光谱揭示了供体-受体对 (DAP) 重组的激子峰和两个声子复制品。其受体和供体电离能分别为27 和7 meV。这表明可以制备高质量的 Cu2ZnSnSe4 薄膜。估计纵向光学声子能量为 28 meV 的实验值。使用光学吸收光谱测定室温下1.01 eV的带隙能量。 (C) 2011 年美国物理研究所。 [doi:10.1063/1.3624827]
Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624827]