Synthesis of aluminium and gallium fluoroalkoxide compounds and the low pressure metal-organic chemical vapor deposition of gallium oxide films
Synthesis of aluminium and gallium fluoroalkoxide compounds and the low pressure metal-organic chemical vapor deposition of gallium oxide films
复制标题
铝、镓氟代醇盐化合物的合成及氧化镓薄膜的低压金属有机化学气相沉积
DOI：
--
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
D. M. Hoffman
中科院分区：
文献类型：
--
作者：
Liliana A. Mîinea;Seigi Suh;S. Bott;Jiarui Liu;W. Chu;D. M. Hoffman
式M(OR
f
）
3
(HNMe
2
) [M=Al 或 Ga;右
f
=CH(CF
3
）
2
, CM
2
（CF
3
) 或 CMe(CF
3
）
2
]是通过相应的金属二甲基酰胺络合物与氟化醇反应制备的。二甲胺加合物与4-二甲氨基吡啶反应得到M(OR
f
）
3
(4-Me
2
Npy) [M=Al或Ga；右
f
=CH(CF
3
）
2
, CM
2
（CF
3
) 或 CMe(CF
3
）
2
]。 Ga[OCH(CF3)晶体结构分析
3
）
2
]
3
(4-Me
2
Npy), Ga[OCMe
2
（CF
3
)]
3
(4-Me
2
Npy) 和 Al[OCMe(CF
3
）
2
]
3
(4-Me
2
Npy）表明它们具有扭曲的四面体几何形状。以Ga[OCH(CF3)为原料制备氧化镓薄膜
3
）
2
]
3
(HNMe
2
）和空气，在基板温度为 250-450 °C 的情况下采用低压化学气相沉积法。在 450°C 下沉积的薄膜的成分为 Ga
2
氧
3.1
通过背向散射分析，光学带隙为 4.9 eV，并且在 300-820 nm 区域的透射率 >90%。
Aluminium and gallium fluoroalkoxide complexes of formula M(OR
f
)
3
(HNMe
2
) [M=Al or Ga; R
f
=CH(CF
3
)
2
, CMe
2
(CF
3
) or CMe(CF
3
)
2
] were prepared by reacting the corresponding metal dimethylamide complexes with fluorinated alcohols. The dimethylamine adducts reacted with 4-dimethylaminopyridine to give M(OR
f
)
3
(4-Me
2
Npy) [M=Al or Ga; R
f
=CH(CF
3
)
2
, CMe
2
(CF
3
) or CMe(CF
3
)
2
]. Crystal structure analyses of Ga[OCH(CF
3
)
2
]
3
(4-Me
2
Npy), Ga[OCMe
2
(CF
3
)]
3
(4-Me
2
Npy) and Al[OCMe(CF
3
)
2
]
3
(4-Me
2
Npy) showed they have distorted tetrahedral geometries. Gallium oxide films were prepared from Ga[OCH(CF
3
)
2
]
3
(HNMe
2
) and air by low-pressure chemical vapor deposition at substrate temperatures of 250-450 °C. Films deposited at 450 °C had a composition of Ga
2
O
3.1
by backscattering analysis, an optical band gap of 4.9 eV, and were >90% transmittant in the 300-820 nm region.