High contrast thermochromic switching in vanadium dioxide (VO2) thin films deposited on indium tin oxide substrates
High contrast thermochromic switching in vanadium dioxide (VO2) thin films deposited on indium tin oxide substrates
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DOI：
10.1016/j.tsf.2012.07.107
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发表时间：
2012-11-01
期刊：
影响因子：
2.1
通讯作者：
Ashrit, P. V.
中科院分区：
文献类型：
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作者：
Beydaghyan, Gisia;Basque, Vincent;Ashrit, P. V.
采用射频磁控溅射技术在镀有氧化铟锡(ITO)的玻璃衬底上制备了具有良好热色开关性能的二氧化钒薄膜。观察到这些薄膜在2500 nm处的透射率从65%到接近零的可逆转换，对比度超过3000。这些薄膜比那些沉积在玻璃片上的薄膜更有利，尤其是在切换到金属状态时，显示出近2个数量级的电阻率下降。与传统的通过加热板加热样品相比，通过电流通过ITO层诱导金属-绝缘体转变可将转变温度降低4-7摄氏度。ITO亚层的存在似乎也导致了VO2薄膜中更小的颗粒尺寸和更宽的磁滞。(C)2012爱思唯尔B.V.保留所有权利。
Vanadium dioxide thin films with excellent thermochromic switching properties were deposited on indium tin oxide (ITO)-coated glass substrates with the RF magnetron sputtering technique. Reversible transmission switching of these films from as much as 65% to near zero at 2500 nm, with contrast ratios of more than 3000, was observed. These films compare favorably to those deposited on glass slides, and, in particular, show a resistivity drop of nearly 2 orders of magnitude upon switching to the metallic state. Inducing the metal-insulator transition by electrical current through the ITO layer lowers the transition temperature by 4-7 degrees C, as compared to traditional heating of the sample by a heating plate. The presence of an ITO sublayer also seems to result in smaller grain size and slightly broader hysteresis in VO2 films. (C) 2012 Elsevier B. V. All rights reserved.