Band alignment of CdTe with MoOx oxide and fabrication of high efficiency CdTe solar cells
Band alignment of CdTe with MoOx oxide and fabrication of high efficiency CdTe solar cells
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CdTe 与 MoOx 氧化物的能带对准以及高效 CdTe 太阳能电池的制造
DOI：
10.1016/j.solener.2018.01.031
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发表时间：
2018-03-01
期刊：
影响因子：
6.7
通讯作者：
Wang, Deliang
中科院分区：
文献类型：
--
作者：
Wang, Dezhao;Yang, Ruilong;Wang, Deliang
用光电子发射光谱定量表征了CdTe薄膜太阳电池背电子电极上的异质界面接触的能带排列。实验结果表明，对于x为2.86-3的MoOx缓冲层，依赖于CdTe表面的化学态和MoOx中x的化学计量比，在接触界面处形成了低至0.23-0.39 eV的势垒。利用MoOx作为背接触缓冲层，可以制备出效率相对较高的CdTe太阳电池，其化学计量比x可以达到2.86-3的较大范围。通过化学腐蚀获得的富Te表面在沉积MoOx薄层时发生了还原反应，导致在费米能级以下形成还原的Mo态和其他缺陷态，这有助于空穴载流子的输运。
The band alignment of CdTe/MoOx hetero-interface contact at back electronic electrode in CdTe thin film solar cell was quantitatively characterized by photon electron emission spectroscopy. The experimental results showed that depending on the CdTe surface chemical state and the stoichiometric value of x in MoOx, energy barrier with a value as low as 0.23-0.39 eV was developed at the CdTe/MoOx contact interface for a MoOx buffer layer with an x value of 2.86-3. CdTe solar cell with relatively high efficiency can be fabricated by using a MoOx as a back contact buffer, which is allowed to have a relatively large stoichiometric x range of 2.86-3. The Te-rich CdTe surface obtained by chemical etching induced a reduction reaction upon the deposition of a MoOx thin layer, leading to the formation of reduced Mo states and other defect states below the Fermi level, which assisted hole carrier transport.