Breaking the phonon bottleneck for holes in semiconductor quantum dots
Breaking the phonon bottleneck for holes in semiconductor quantum dots
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DOI：
10.1103/physrevlett.98.177403
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发表时间：
2007-04-27
影响因子：
8.6
通讯作者：
Kambhampati, Patanjali
中科院分区：
文献类型：
--
作者：
Cooney, Ryan R.;Sewall, Samuel L.;Kambhampati, Patanjali
测量了胶体CdSe量子点中特定态-态激子跃迁的尺寸相关空穴动力学。这些实验表明，对于较小的量子点，空穴能量损失率增加，这与空穴的已知弛豫机制相矛盾。这些实验揭示了胶体量子点中空穴弛豫的一种新机制，它绕过了预期的空穴声子瓶颈。的数据是一致的非绝热表面通道作为主要途径，在胶体半导体量子点的空穴弛豫。
Size dependent hole dynamics are measured in colloidal CdSe quantum dots for a specific state-to-state excitonic transition. These experiments show that the hole energy loss rate increases for smaller quantum dots, contradicting known relaxation mechanisms for holes. These experiments reveal a new mechanism for hole relaxation in colloidal quantum dots which circumvents the expected phonon bottleneck for holes. The data are consistent with a nonadiabatic surface channel as the dominant pathway for hole relaxation in colloidal semiconductor quantum dots.