Monolithic integration of capacitive sensors using a double-side CMOS MEMS post process
Monolithic integration of capacitive sensors using a double-side CMOS MEMS post process
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DOI：
10.1088/0960-1317/19/1/015023
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发表时间：
2009-01-01
影响因子：
2.3
通讯作者：
Fang, Weileun
中科院分区：
文献类型：
--
作者：
Sun, Chih-Ming;Wang, Chuanwei;Fang, Weileun
提出了一种新型的双面互补金属氧化物半导体后处理工艺，将各种电容型CMOSMEMS传感器单片集成在一块芯片上。CMOS后处理包括三个步骤：(1)正面体硅刻蚀，(2)背面体硅刻蚀，(3)牺牲表面金属层刻蚀。采用台积电2P4M CMOS工艺和双面后处理工艺，成功地将多种类型的电容传感器及其传感电路集成在一块芯片上。介绍了不同传感范围和灵敏度的压力传感器、三轴加速度计、压力传感器和加速度计的单片集成。压力传感器的测量结果表明，其灵敏度在0.14 mV kPa(-1)到7.87 mV kpa(-1)之间。三轴加速度计的面内灵敏度为3.9 mV G(-1)，面外灵敏度为0.9 mV G(-1)，加速测量范围为0.3~6 G。
This study presents a novel double-side CMOS (complementary metal-oxide-semiconductor) post-process to monolithically integrate various capacitance-type CMOS MEMS sensors on a single chip. The CMOS post-process consists of three steps: (1) front-side bulk silicon etching, ( 2) backside bulk silicon etching and ( 3) sacrificial surface metal layers etching. Using a TSMC 2P4M CMOS process and the present double-side post-process this study has successfully integrated several types of capacitive transducers and their sensing circuits on a single chip. Monolithic integration of pressure sensors of different sensing ranges and sensitivities, three-axes accelerometers, and a pressure sensor and accelerometer are demonstrated. The measurement results of the pressure sensors show sensitivities ranging from 0.14 mV kPa(-1) to 7.87 mV kPa(-1). The three-axes accelerometers have a sensitivity of 3.9 mV G(-1) in the in-plane direction and 0.9 mV G(-1) in the out-of-plane direction; and the accelerated measurement ranges from 0.3 G to 6 G.