Si-based metal-semiconductor-metal photodetectors with various design modifications
Si-based metal-semiconductor-metal photodetectors with various design modifications
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DOI：
10.1016/j.sse.2006.11.006
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发表时间：
2007-01-01
影响因子：
1.7
通讯作者：
Anderson, Wayne A.
中科院分区：
文献类型：
--
作者：
Li, Meiya;Anderson, Wayne A.
我们在n型非晶硅/晶硅（a-Si：H/c-Si）衬底上设计并制作了叉指型金属-半导体-金属光电探测器（MSM-PD）。厚的和薄的二氧化硅（SiO（2））层生长，以减少暗电流和钝化表面。Au、Cr、Ni和Pd金属用于金属化。当与传统的Si基膜相比时，具有添加的a-Si膜的检测器（0.75 × 0.5 cm（2））的暗电流在5V下从0.137 mA降低到2.61 μ A。它的幅度被发现是至少两个订单低于传统的样品。简单的金属/硅肖特基二极管的衬底在RT和低温（LT）。结果表明，低温金属化工艺可提高肖特基势垒高度。随着金属化温度的降低，暗电流和速度都得到了显著的改善。随着金属化过程中衬底温度从室温（RT）降低到210 K，在800 nm处的半高宽（FWHM）、上升时间和下降时间分别从0.47 μ s降低到6.2 μ s、49.7 μ s降低到23.9 μ s和2.07 μ s降低到0.41 μ s。在150 K时，与RT样品相比，LT样品的肖特基势垒高度和理想因子分别从0.399 eV增加到0.481 eV和3.76增加到4.64。电流-电压-温度（I-V-T）分析表明，在正向电流区，电子场发射主导电流输运。(c)2006爱思唯尔有限公司保留所有权利。
We have designed and fabricated interdigitated metal-semiconductor-metal photodetectors (MSM-PD's) on n-type amorphous Si/crystalline Si (a-Si:H/c-Si). Both thick and thin silicon dioxide (SiO(2)) layers were grown to reduce dark current and passivate the surface. Au, Cr, Ni, and Pd metals were used for metallization. The dark current for the detector (0.75 x 0.5 cm(2)) with the added a-Si film was reduced from 0.137 mA to 2.61 mu A at 5 V when compared with that of the conventional Si-based film. Its magnitude was found to be at least two orders lower than that of the conventional sample. Simple metal/Si Schottky diodes were fabricated with substrates at RT and low temperature (LT). It was found that Schottky barrier height was improved with cryogenic metallization processing. Both dark current and speed were significantly improved as metallization temperature decreased. The full width at half maximum (FWHM), rise time, and fall time at 800 nm reduced from 0.47 mu s to 6.2 mu s, 49.7 mu s to 23.9 mu s, and 2.07 mu s to 0.41 mu s, respectively, as substrate temperature during metallization decreased from room temperature (RT) to 210 K. Schottky barrier height and ideality factor for the LT samples were increased from 0.399 eV to 0.481 eV, and 3.76 to 4.64, respectively, compared to that of the RT sample at 150 K. The current-voltage-temperature (I-V-T) analysis showed that thermionic field emission dominated the current transport in the forward current region. (c) 2006 Elsevier Ltd. All rights reserved.