Nitrogen incorporation in amorphous SiCN layers prepared from electron cyclotron resonance plasmas
Nitrogen incorporation in amorphous SiCN layers prepared from electron cyclotron resonance plasmas
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DOI：
10.1007/s003390050948
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发表时间：
1999-05
期刊：
影响因子：
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通讯作者：
L. Barbadillo;F. J. Gómez;M. J. Hernández;J. Piqueras
中科院分区：
文献类型：
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作者：
L. Barbadillo;F. J. Gómez;M. J. Hernández;J. Piqueras
以氮、甲烷和氩气稀释硅烷为前驱体，采用电子回旋共振等离子体化学气相沉积法制备了SiCN薄膜。已经观察到等离子体中CN种的光发射。红外测量表明，大部分氮以Si-N、C=N和C≡N键的形式结合到薄膜中，表明具有C=N和C≡N桥键的不完全SiN四面体的基本结构。所制备的薄膜在可见光范围内接近透明，吸收阈值在2.2 ~ 3.5 eV之间。
Electron cyclotron resonance plasma chemical vapor deposition with nitrogen, methane, and argon-diluted silane as precursors has been used to prepare SiCN thin films. Optical emission from CN species in the plasma has been observed. Infrared measurements show that most of the nitrogen is incorporated to the thin solid films in the form of Si-N, C=N and C≡N bonds suggesting a basic structure of incomplete SiN tetrahedra with C=N and C≡N bridging bonds. The deposited films are nearly transparent in the visible range with a weak absorption threshold between 2.2 and 3.5 eV.