Scanning thermal microscopy for accurate nanoscale device thermography
Scanning thermal microscopy for accurate nanoscale device thermography
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DOI：
10.1016/j.nantod.2021.101206
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发表时间：
2021-08
期刊：
影响因子：
17.4
通讯作者：
F. Gucmann;J. Pomeroy;Martin Kuball
中科院分区：
文献类型：
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作者：
F. Gucmann;J. Pomeroy;Martin Kuball
我们调查的准确性和可靠性的温度映射使用扫描热显微镜（SThM）在接触和PeakForce轻敲模式的GaN上的SiC高电子迁移率晶体管（HEMT）的例子。从SThM测量中提取HEMT稳态和瞬态表面温度，研究SThM探针的测量精度和瞬态热响应，并通过拉曼热成像校准的三维有限元热模拟对测量结果进行验证。开发了一种可靠的逐像素校准方法，将测量的电动势转换为表面温度。离散点测量结果与接触和PeakForce轻敲模式下的模拟结果具有良好的一致性（±3 °C），证明了SThM用于纳米级精确器件热成像的可行性。然而，校准后的2D温度图中的实测温度与模拟偏差高达~15-44%，表明由于2D图记录期间像素停留时间的限制，SThM探头未达到温度稳定状态。
We investigate the accuracy and reliability of temperature mapping using scanning thermal microscopy (SThM) in contact and PeakForce tapping mode on the example of a GaN-on-SiC high electron mobility transistor (HEMT). HEMT steady-state and transient surface temperatures are extracted from SThM measurements to study the method’s accuracy and transient thermal response of the SThM probe; the results are verified by 3D finite element thermal simulation calibrated by Raman thermography. A reliable pixel-by-pixel calibration method to convert the measured electromotive force into surface temperature was developed. Discrete point measurements show good agreement (±3 °C) with the simulation in both contact and PeakForce tapping modes proving the feasibility of the SThM for accurate device thermography at the nanoscale. However, the measured temperature in calibrated 2D temperature maps deviates by as much as ~15–44% from the simulation, suggesting the SThM probe did not reach the temperature steady state due to limitations in pixel dwell time during the recording of the 2D map.