Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration
Roles of nitrogen incorporation in HfAlOx(N) gate dielectrics for suppression of boron penetration
复制标题
HfAlOx(N) 栅极电介质中氮的掺入对抑制硼渗透的作用
DOI：
10.1116/1.1768526
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发表时间：
2004
影响因子：
1.4
通讯作者：
A. Toriumi
中科院分区：
文献类型：
--
作者：
T. Nabatame;K. Iwamoto;Katsuhiko Yamamoto;K. Tominaga;H. Hisamatsu;M. Ohno;K. Akiyama;M. Ikeda;T. Nishimura;H. Ota;T. Horikawa;A. Toriumi
研究了氮气掺杂对HfAlOx薄膜栅漏电流和平带电压VFB漂移的影响。此外，还讨论了HfAlOx(N)中O-Hf-N键态在抑制硼渗透中的作用。控制HfAlOx(N)中的氮浓度CN是通过改变逐层沉积和退火过程中的NH3退火温度和沉积后退火的O2退火温度来实现的。在HfAlOx(N)薄膜中加入10at. %以上的CN，有效地抑制了硼在Hf3N4薄膜中的缓慢扩散和在HfOx(N)中形成的硼-氮远程络合物，与未掺氮的HfAlOx相比，保持了非晶态结构，减小了VfB漂移，而超过13at. %的CN则导致栅漏电流显著增加。这表明过量的O-Hf-N键的形成增强了漏电流。
We have investigated impacts of nitrogen incorporation into HfAlOx films on the gate leakage currents and the flat band voltage VFB shifts. Also, a role of O–Hf–N bonding states in HfAlOx(N) in suppression of boron penetration is discussed. The nitrogen concentration CN in HfAlOx(N) was controlled by changing the NH3 annealing temperature at the step of the layer-by-layer deposition and annealing process as well as the O2 annealing temperature of post-deposition annealing. The CN over 10 at. % in HfAlOx(N) films effectively suppressed boron penetration as revealed by very slow diffusion in Hf3N4 films and the formation of boron-nitrogen remote complex in HfOx(N), preserved the amorphous structure and reduced the VFB shift compared to the case of HfAlOx without nitrogen incorporation, while CN exceeding 13 at. % led to a significant increase of the gate leakage current. This suggests the excess O–Hf–N bond formation enhanced the leakage current.