InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-/spl mu/m applications grown by gas-source MBE
InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-/spl mu/m applications grown by gas-source MBE
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DOI：
10.1109/68.392218
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发表时间：
1994-12
影响因子：
2.6
通讯作者：
R. Pathak;K. Goossen;J. Cunningham;W. Jan
中科院分区：
文献类型：
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作者：
R. Pathak;K. Goossen;J. Cunningham;W. Jan
我们报告了光纤到户应用中以 1.55 /spl mu/m 运行的 In/sub 0.53/Ga/sub 0.47/As-InP 多量子阱 (MQW) 调制器的增长情况。通过在 p-i-n 结构的本征区域中采用 200 周期 InGaAs-InP MQW 堆栈并在反射中工作，我们已经能够实现表现出优于 8:1 对比度的表面法向调制器器件。这是迄今为止报告的在该波长下工作的此类设备的最高对比度。>
We report growth of In/sub 0.53/Ga/sub 0.47/ As-InP multiple quantum well (MQW) modulators operating at 1.55 /spl mu/m for fiber-to-the-home applications. By employing a 200-period InGaAs-InP MQW stack in the intrinsic region of a p-i-n structure and working in reflection, we have been able to realize surface-normal modulator devices that exhibit better than an 8:1 contrast ratio. This is the highest contrast ratio reported to date for this type of device working at this wavelength.>