Ballistic thermal transport in silicon nanowires.
Ballistic thermal transport in silicon nanowires.
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DOI：
10.1038/srep41794
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发表时间：
2017-02-02
影响因子：
4.6
通讯作者：
Nomura M
中科院分区：
文献类型：
--
作者：
Maire J;Anufriev R;Nomura M
我们通过实验研究了尺寸和温度对采用自顶向下方法制备的硅纳米线导热性的影响。热导率的宽度和温度依赖性与现有文献一致。热导率的长度依赖表现为从4k的半弹道热声子输运到室温下的完全扩散输运的转变。我们还在弹性理论的框架下计算了这些结构中的声子色散，并表明热导率随宽度的增加而增加。这与我们的实验结果一致，支持了在低温下使用改进的声子色散的相关性。
We have experimentally investigated the impact of dimensions and temperature on the thermal conductivity of silicon nanowires fabricated using a top-down approach. Both the width and temperature dependences of thermal conductivity agree with those in the existing literature. The length dependence of thermal conductivity exhibits a transition from semi-ballistic thermal phonon transport at 4 K to fully diffusive transport at room temperature. We additionally calculated the phonon dispersion in these structures in the framework of the theory of elasticity and showed that the thermal conductance increases with width. This agrees with our experimental observations and supports the pertinence of using the modified phonon dispersion at low temperatures.