Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs
Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs
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DOI：
10.1063/1.3337111
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发表时间：
2010-03
影响因子：
4
通讯作者：
K. Litvinenko;M. Leontiadou;Juerong Li;S. Clowes;M. Emeny;T. Ashley;C. Pidgeon;L. Cohen;B. Murdin
中科院分区：
文献类型：
--
作者：
K. Litvinenko;M. Leontiadou;Juerong Li;S. Clowes;M. Emeny;T. Ashley;C. Pidgeon;L. Cohen;B. Murdin
在中等（<4 T）外部磁场中测量了 InSb 和 InAs 外延层的电子自旋弛豫时间。对于纵向（法拉第）和横向（沃伊特）配置，观察到自旋寿命具有强烈且相反的场依赖性。在法拉第配置中，由于 D'yakonov-Perel' 移相过程受到抑制，自旋寿命增加。在高场限制下，Elliot-Yafet 自旋翻转弛豫过程占主导地位，使其能够直接测定。相反，正如对窄带隙半导体的理论预测，额外的有效自旋相移机制在 Voigt 配置中占主导地位，随着电场的增加，电子自旋寿命显着降低。
Electron spin relaxation times have been measured in InSb and InAs epilayers in a moderate (<4 T) external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the D’yakonov–Perel’ dephasing process is suppressed. At the high field limit the Elliot–Yafet spin flip relaxation process dominates, enabling its direct determination. Conversely, as predicted theoretically for narrow band gap semiconductors, an additional efficient spin dephasing mechanism dominates in the Voigt configuration significantly decreasing the electron spin lifetime with increasing field.