Effects of magnetic field on the manganite-based bilayer junction
Effects of magnetic field on the manganite-based bilayer junction
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DOI：
10.1063/1.1664032
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发表时间：
2004-02
影响因子：
4
通讯作者：
Jirong Sun;C. Xiong;T. Zhao;Suohui Zhang;Y. Chen;B. Shen
中科院分区：
文献类型：
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作者：
Jirong Sun;C. Xiong;T. Zhao;Suohui Zhang;Y. Chen;B. Shen
在掺Nb质量分数为0.5wt%的SrTiO_3晶体上生长了La0.32Pr0.35Ca0.33MnO_3薄膜，制备了氧化物双层结，并对其在磁场下的行为进行了实验研究。研究发现，外场对结的整流特性和电阻有很大的影响，导致了极大的磁阻。本工作最引人注目的发现是，结的磁阻可以是正的，也可以是负的，这取决于温度和施加的电流，并且相对于偏置电流的方向是不对称的。这些结果揭示了锰氧化物在配置人造设备方面的巨大潜力。
An oxide bilayer junction has been fabricated by growing a La0.32Pr0.35Ca0.33MnO3 film on 0.5 wt % Nb-doped SrTiO3 crystal, and its behavior under magnetic field is experimentally studied. It is found that external field greatly affected the rectifying property and the resistance of the junction, causing an extremely large magnetoresistance. The most striking observation of the present work is that the magnetoresistance of the junction can be either positive or negative, depending on temperature and applied current, and is asymmetric with respect to the direction of the bias current. These results reveal the great potential of the manganites in configuring artificial devices.