Direct observation of electromigration of Si magic clusters on Si(111) surfaces
Direct observation of electromigration of Si magic clusters on Si(111) surfaces
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DOI：
10.1103/physrevlett.84.5792
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发表时间：
2000-06-19
影响因子：
8.6
通讯作者：
Tsong, TT
中科院分区：
文献类型：
--
作者：
Ho, MS;Hwang, IS;Tsong, TT
用扫描隧道显微镜观察了Si在Si（111）-（7 × 7）表面上的电迁移，并确定了扩散物种为Si魔团簇。分别定量地确定了沿着加热电流方向的定向运动对电迁移和热迁移的影响。我们还观察到优先填充的二维（2D）硅坑和优先脱离的Si魔术团簇的边缘附近的阴极侧的2D硅岛。这种各向异性行为的驱动力比以前认识到的要强得多。
Using scanning tunneling microscopy, we have observed electromigration of Si on Si(lll)-(7 X 7) surfaces and have identified the diffusion species to be Si magic clusters. Effects of the directed motion along the direction of the heating current in electromigration and those in thermal migration are determined separately and quantitatively. We also observe the preferential filling of two-dimensional (2D) Si craters and the preferential detachment of Si magic clusters from the edges of 2D Si islands near the cathode side. The driving force for this anisotropic behavior is much stronger than previously recognized.