Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement
Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement
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DOI：
10.1109/ispsd.2016.7520821
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发表时间：
2016-06
期刊：
影响因子：
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通讯作者：
S. Palanisamy;S. Fichtner;J. Lutz;T. Basler;R. Rupp
中科院分区：
文献类型：
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作者：
S. Palanisamy;S. Fichtner;J. Lutz;T. Basler;R. Rupp
在这项工作中，1200 V SiC MPS二极管的浪涌电流行为进行了分析，使用电热模拟。将结果与用于校准的测量值进行比较。等温浪涌电流的模拟进行了简化模型的真实的二极管结构与各种尺寸的引脚区域和各种总的模型宽度。模拟结果表明，较小的pin区域比较大的pin区域在更高的电压降和电流密度下触发少数载流子注入。在测量中看到的负微分电阻（NDR）制度，成功地建模。仿真和测量都显示了浪涌电流事件期间的类似行为。此外，还研究了浪涌电流事件期间模型几何形状的影响。
In this work, the surge current behavior of 1200V SiC MPS diodes is analyzed using electro-thermal simulations. The results are compared to measurements for calibration. The isothermal surge current simulations are performed with a simplified model of the real diode structure with various sizes of pin-regions and various total model widths. The simulation result shows that smaller pin-regions trigger minority carrier injection at higher voltage drop and current density than the larger pinregions. The negative differential resistance (NDR) regime, seen in the measurement, is modeled successfully. Both, simulations and measurements show a similar behavior during a surge current event. Furthermore, the influence of the model geometry during the surge current event is investigated.