ZnO low-dimensional structures: electrical properties measured inside a transmission electron microscope
ZnO low-dimensional structures: electrical properties measured inside a transmission electron microscope
复制标题
DOI：
10.1007/s10853-007-2307-1
复制
发表时间：
2008-02
影响因子：
4.5
通讯作者：
P. Costa;D. Golberg;G. Shen;M. Mitome;Y. Bando
中科院分区：
文献类型：
--
作者：
P. Costa;D. Golberg;G. Shen;M. Mitome;Y. Bando
使用透射电子显微镜 (TEM) 的扫描隧道显微镜 (STM) 原位支架分析了纤锌矿型 ZnO 低维结构的电性能。与文献中使用纳米线或纳米带的类似研究相比，我们的工作表明，使用这种技术可以可靠地分析相当复杂的结构。通过受控的接触操作，可以改变系统的 I-V 特性，并在单独的实验中跟踪它们对诱导应力循环的电响应。 I-V 曲线分析显示电阻高于预期，根据详细的 TEM 表征，这可能与存在的相当大的缺陷密度相关。这些缺陷累积在 ZnO 复杂结构阵列的特定区域，当系统承受极端电流时，这些缺陷代表导致结构故障的高电阻点。
The electrical properties of wurtzite-type ZnO low-dimensional structures were analysed using a scanning tunnelling microscopy (STM) in situ holder for transmission electron microscopes (TEM). Compared to similar studies in the literature employing nanowires or nanobelts, our work illustrates that rather complex structures can be reliably analysed with this technique. Through controlled contact manipulations it was possible to alter the systemsI–Vcharacteristics and, in separate experiments, to follow their electrical response to cycles of induced stress. Analysis of theI–Vcurves showed higher than expected resistances which, according to the detailed TEM characterisation, could be correlated with the considerable density of defects present. These defects accumulate in specific areas of the complex structural arrays of ZnO and represent high resistance points responsible for structural failure, when the systems are subjected to extreme current flows.