Effect of sputtering pressure on pulsed-DC sputtered iridium oxide films
Effect of sputtering pressure on pulsed-DC sputtered iridium oxide films
复制标题
DOI：
10.1016/j.snb.2008.11.015
复制
发表时间：
2009-03-28
影响因子：
8.4
通讯作者：
Solzbacher, F.
中科院分区：
文献类型：
--
作者：
Negi, S.;Bhandari, R.;Solzbacher, F.
本文报道了用Ar和O-2(1：1)混合气体溅射时，溅射气压在5~50mTorr范围内对脉冲直流反应溅射制备的IrOx薄膜性能的影响。用表面分析方法(扫描电子显微镜、原子力显微镜、能量色散X射线能谱、X射线衍射)、四探针法和电化学技术(循环伏安法和电化学阻抗谱)对溅射的IrOx薄膜进行了表征。最佳的溅射气压为5mTorr，此时活化的IrOx HIM的电荷存储容量最大，达到28.3mC/cm(2)，几乎是50mTorr时的3倍。在低压条件下制备的IrOx薄膜具有优良的机械、电学和电化学性能，是一种理想的神经假体刺激电极材料。(C)2008爱思唯尔B.V.保留所有权利。
This paper reports the influence of the sputtering pressure, ranging from 5 to 50 mTorr using a mixture of Ar and O-2 (1:1), on the properties of the IrOx films deposited by pulsed-DC reactive sputtering. The sputtered IrOx films were characterized by Surface analysis methods (scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectrometry, X-ray diffraction), four-point probe method, and electrochemical techniques (cyclic voltammetry and electrochemical impedance spectroscopy). The optimal sputtering pressure was identified to be 5 mTorr at which the activated IrOx him showed highest charge storage capacity of 28.3 mC/cm(2), which was almost three times higher than that of samples deposited at 50 mTorr. The IrOx films deposited at low pressure showed excellent mechanical electrical and electrochemical characteristics and hence can be recommended as an ideal stimulation electrode material for neuroprosthetic applications. (C) 2008 Elsevier B.V. All rights reserved.