Resolution and contrast in Kelvin probe force microscopy
Resolution and contrast in Kelvin probe force microscopy
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DOI：
10.1063/1.368181
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发表时间：
1998-08-01
影响因子：
3.2
通讯作者：
Stemmer, A
中科院分区：
文献类型：
--
作者：
Jacobs, HO;Leuchtmann, P;Stemmer, A
原子力显微镜和开尔文探针技术的结合是获得导电和非导电样品表面电位分布的高分辨率地图的有力工具。然而，到目前为止，这种方法的分辨率和对比度传递还没有完全被理解。为了获得更好的定量理解，我们引入了一个模型，将测量的电势与实际的表面电势分布关联起来，并将三维针尖-样品模型的数值模拟与来自测试结构的实验数据进行了比较。观察到的电势是存在于样品表面上的所有电势的局部加权平均。该模型允许我们计算这些权重因子，并进一步得出结论：在位图中，通过最小宽度和表面积的悬臂梁上的细长但略微钝化的尖端可以获得良好的分辨率。(C)1998年美国物理研究所。
The combination of atomic force microscopy and Kelvin probe technology is a powerful tool to obtain high-resolution maps of the surface potential distribution on conducting and nonconducting samples. However, resolution and contrast transfer of this method have not been fully understood, so far. To obtain a better quantitative understanding, we introduce a model which correlates the measured potential with the actual surface potential distribution, and we compare numerical simulations of the three-dimensional tip-specimen model with experimental data from test structures. The observed potential is a locally weighted average over all potentials present on the sample surface. The model allows us to calculate these weighting factors and, furthermore, leads to the conclusion that good resolution in potential maps is obtained by long and slender but slightly blunt tips on cantilevers of minimal width and surface area. (C) 1998 American Institute of Physics.