Role of interfacial dipole layer for energy-level alignment at organic/metal interfaces
Role of interfacial dipole layer for energy-level alignment at organic/metal interfaces
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DOI：
10.1016/j.orgel.2009.05.014
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发表时间：
2009-08
影响因子：
3.2
通讯作者：
Yusuke Tanaka;K. Kanai;Y. Ouchi;K. Seki
中科院分区：
文献类型：
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作者：
Yusuke Tanaka;K. Kanai;Y. Ouchi;K. Seki
使用开尔文探针方法研究了铜-酞菁/金属界面的能级排列。金属表面的有机层在能级排列中起着两个重要作用：界面偶极子（ID）的形成和金属表面的钝化。 ID层决定金属和有机半导体之间的注入势垒。在ID层上有机层的最低未占据分子轨道能级低于钝化金属基底的费米能级的情况下，从钝化金属基底到多个有机层的自发电荷转移导致费米能级钉扎。
The energy-level alignment at Cu-phthalocyanine/metal interfaces has been studied using the Kelvin probe method. The organic layer on a metal surface plays two important roles in the energy-level alignment: the formation of the interfacial dipole (ID) and the passivation of the metal surface. The ID layer determines the injection barrier between the metal and the organic semiconductor. In cases where the lowest unoccupied molecular orbital level of the organic layer on the ID layer is below the Fermi level of the passivated metal substrate, the spontaneous charge transfer from the passivated metal substrate to several organic layers leads to the Fermi-level pinning.