SUPERCURRENT DENSITY DISTRIBUTION IN JOSEPHSON JUNCTIONS
SUPERCURRENT DENSITY DISTRIBUTION IN JOSEPHSON JUNCTIONS
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DOI：
10.1103/physrevb.3.3015
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发表时间：
1971-01-01
影响因子：
3.7
通讯作者：
FULTON, TA
中科院分区：
文献类型：
--
作者：
DYNES, RC;FULTON, TA
隧道结的临界直流约瑟夫森电流Ic的调制形式被施加的磁场B示出为唯一相关的超电流密度分布的结内集成的方向上的B。这种关系是用来定量确定这些”电流密度分布”从IC（B）测量的锡氧化物-锡结的障碍制备的等离子体放电氧化和Giaever所描述的新型光敏结，其中的隧穿势垒是由CdS的蒸发膜形成。
The form of the modulation of the critical dc Josephson current I c of a tunnel junction by an applied magnetic field B is shown to be uniquely related to the supercurrent density distribution within the junction integrated over the direction of B. This relation is used to quantitatively determine these" current-density profiles" from I c (B) measured for Sn-oxide-Sn junctions with barriers prepared by plasma-discharge oxidation and for the novel light-sensitive junctions described by Giaever, in which the tunneling barrier is formed by an evaporated film of CdS.