In situ TEM observation of the vapor-solid-solid growth of InAs nanowires
In situ TEM observation of the vapor-solid-solid growth of InAs nanowires
复制标题
In As 纳米线气-固-固生长的原位 TEM 观察
作者：
Sun Qiang;Pan Dong;Li Meng;Zhao Jianhua;Chen Pingping;Lu Wei;Zou Jin
原位电子显微镜表征是研究催化剂诱导半导体纳米线生长机理的有力手段。通过在原子水平上提供晶体生长的直接证据，对Au催化的<；00>；InAs纳米线进行了实时原位加热研究。研究发现，在纳米线生长过程中，Au催化剂以固相形式存在，并与其底层的InAs纳米线保持着固定的外延关系，表明了气-固机理。重要的是，<；00>；InAs纳米线在催化剂/纳米线界面以一层一层的方式生长是显而易见的。本研究对气-固三相生长提供了直观的见解，并阐明了~lt；00>；III-V纳米线的生长机理，为控制~lt；00>；半导体纳米线的生长提供了途径。
In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <00> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor–solid–solid mechanism. Importantly, the growth of <00> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor–solid–solid growth and clarified the growth mechanism of <00> III–V nanowires, which provides pathways in controlling the growth of <00> semiconductor nanowires.