Synthesis of large scale graphene oxide using plasma enhanced chemical vapor deposition method and its application in humidity sensing

Synthesis of large scale graphene oxide using plasma enhanced chemical vapor deposition method and its application in humidity sensing
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等离子体增强化学气相沉积法合成大尺寸氧化石墨烯及其在湿度传感中的应用

DOI:
10.1063/1.4942999
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发表时间:
2016-03-14
影响因子:
3.2
通讯作者:
Chen, Yuming
Chen, Yuming
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Liu, Yang;Chen, Yuming

文献摘要

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采用等离子体增强化学气相沉积法,在500 ℃甚至更低的温度下,在铜箔上直接合成大尺寸氧化石墨烯(GO)。与改进的Hummer方法相比,本文中获得的GO片较大,并且可以根据Cu箔尺寸进行缩放。GO中的含氧基团通过甲烷(99.9%纯度)的残余气体引入。为了防止等离子体中的离子轰击铜表面,我们使用低强度放电。我们的实验表明,生长温度对GO中的碳氧比(C/O比)具有重要影响;并且它还影响碳原子之间的pi-pi* 键的量。在6 mm x 12 mm GO基湿度传感器上的初步实验证明,合成的GO对湿度变化反应良好。我们的GO合成方法可以提供另一种渠道,获得大规模的GO在气体传感或其他应用。(C)2016 AIP Publishing LLC.
Large scale graphene oxide (GO) is directly synthesized on copper (Cu) foil by plasma enhanced chemical vapor deposition method under 500 degrees C and even lower temperature. Compared to the modified Hummer's method, the obtained GO sheet in this article is large, and it is scalable according to the Cu foil size. The oxygen-contained groups in the GO are introduced through the residual gas of methane (99.9% purity). To prevent the Cu surface from the bombardment of the ions in the plasma, we use low intensity discharge. Our experiment reveals that growth temperature has important influence on the carbon to oxygen ratio (C/O ratio) in the GO; and it also affects the amount of pi-pi* bonds between carbon atoms. Preliminary experiments on a 6mm x 12mm GO based humidity sensor prove that the synthesized GO reacts well to the humidity change. Our GO synthesis method may provide another channel for obtaining large scale GO in gas sensing or other applications. (C) 2016 AIP Publishing LLC.