Phonon structure of LaB6 by point-contact spectroscopy
Phonon structure of LaB6 by point-contact spectroscopy
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点接触光谱法测定 LaB6 的声子结构
DOI：
10.1143/jpsj.57.361
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发表时间：
1988
影响因子：
1.7
通讯作者：
S. Kunii
中科院分区：
文献类型：
--
作者：
S. Kunii
研究了LaB6针一侧与LaB6(100)解理面之间点接触时的微分电阻dV/dI与电压特性的关系。采用现场自动清洗技术对样品表面进行清洗。纯金属点接触的光谱与氧化层插入的隧道接触的光谱相反，即前者是足够清洁表面的无势垒结，后者是有意氧化表面的势垒型结。二阶导数d2V/dI2的测量给出了LaB 6声子态密度的信息，增加了当前中子散射实验的新实验结果。实验6的声子态密度峰位于12、24、38和50 meV。
The differential resistance d V /d I versus voltage characteristics is studied for point-contacts between a LaB 6 -needle on one side and a LaB 6 (100)-cleavage surface on the other. A technique of automatic in situ cleaning is used to clean the sample surface. The spectra of pure metal point-contacts are contrary to that of the tunneling contacts interposed by the oxide layer, that is, the former is for the barrierless junction of enough clean surface and the latter is for the barrier-type junction of intentionally oxidized surface. The measurements of the second derivative d 2 V /d I 2 give the information on the phonon density of states of LaB 6 , adding new experimental results on the current neutron scattering experiment. The peaks of the phonon density of states of LaB 6 are situated at 12, 24, 38 and 50 meV.