Antiferromagnetic coupling in perpendicularly magnetized Ni/Cu/Ni epitaxial trilayers
Antiferromagnetic coupling in perpendicularly magnetized Ni/Cu/Ni epitaxial trilayers
复制标题
垂直磁化 Ni/Cu/Ni 外延三层中的反铁磁耦合
DOI：
10.1016/s0304-8853(01)00898-8
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发表时间：
2002
影响因子：
2.7
通讯作者：
R. O'handley
中科院分区：
文献类型：
--
作者：
G. Gubbiotti;G. Carlotti;M. Ciria;F. Spizzo;R. Zivieri;L. Giovannini;F. Nizzoli;R. O'handley
本文研究了Si（001）衬底上垂直磁化的Ni/Cu/Ni三层外延膜的磁性。两个Ni层的厚度均为3.3nm，而Cu层间层的厚度范围为1.83至3.66nm。用沿沿着垂直于膜的轴施加的磁场测量的M-H环显示出以几乎恒定的磁化强度值为特征的平台。对于特定的值的Cu层间厚度，证据是关于一个可观的磁阻效应，这可以解释在两个Ni膜之间的反铁磁耦合。
The magnetic properties of perpendicularly magnetized Ni/Cu/Ni epitaxial trilayers grown on Si(001) substrates have been studied. The thickness is 3.3nm for both the Ni layers while the Cu interlayer thickness ranges from 1.83 to 3.66nm. The M – H loops measured with the magnetic field applied along the axis perpendicular to the film show plateaus characterized by an almost constant value of the magnetization. For specific values of the Cu interlayer thickness, evidence is given regarding an appreciable magnetoresistance effect, which can be explained in terms of an antiferromagnetic coupling between the two Ni films.