INFLUENCE OF THE MORPHOLOGY AND POROSITY OF N-HEXANE FILMS ON THE ELECTRON-STIMULATED LUMINESCENCE AND DESORPTION OF METASTABLE ARGON FROM ADSORBED AR GON
INFLUENCE OF THE MORPHOLOGY AND POROSITY OF N-HEXANE FILMS ON THE ELECTRON-STIMULATED LUMINESCENCE AND DESORPTION OF METASTABLE ARGON FROM ADSORBED AR GON
复制标题
正己烷薄膜的形貌和孔隙率对电子激发发光和亚稳态氩从吸附氩中解吸的影响
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
L. Sanche
中科院分区：
文献类型：
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作者：
E. Vichnevetski;L. Sanche
研究了电子轰击能量(5−25 eV)、厚度(1−20单分子层)和沉积温度(20−70 K)对Ar在铂衬底上沉积的电子诱导脱附光子和亚稳Ar的影响。该信号强烈依赖于正己烷沉积的温度(T)，该温度控制着隔离物的形态从低温(20K)的非晶态转变为T=70K的晶态。在低温下，光子和亚稳信号的组合与非晶态正己烷层的厚度成反比。这种行为是由正己烷衬底中存在的多孔结构解释的，该结构有效地吸收了Ar。将正己烷的沉积温度从20K提高到70K，由于孔体积的减小，导致合成信号的增加。后一种信号与隔膜厚度无关，当它是由凝聚到晶体上的薄Ar膜产生时。
The electron-stimulated desorption of the combined photon and metastable argon yields from Ar condensed onto n-hexane spacer films deposited on Pt(111) is investigated as a function of electron-impact energy (5−25 eV) and thickness (1−20 monolayers) and deposition temperature (20−70 K) of the n-hexane layer. The signal is strongly dependent on the temperature (T) of n-hexane deposition, which controls the morphology of the spacer from amorphous at low temperature (20 K) to crystalline at T = 70 K. At low T, the combined photon and metastable signal is inversely proportional to the thickness of the amorphous n-hexane layer. Such behavior is explained by the existence of a porous structure in the n-hexane substrate, which efficiently absorbs argon. Increasing the deposition temperature of n-hexane from 20 to 70 K results in an increase of the combined signal due to the decrease of the pore volume. The latter signal is independent of spacer film thickness, when it arises from thin Ar films condensed onto cry...